RECIPE for success

RECIPE is a powerful, easy-to-use RIE/ICP (Reactive Ion Etch/Inductive Coupled Plasma) etch process simulation tool for use in designing microstructures. With RECIPE, you can layout your microstructure and automatically simulate isotropic, RIE, ICP/Bosch/DRIE etching or any combination of the three processes.

RECIPE supports the simulation of both ion-assisted etching and deposition processes. In fact, it is the only tool on the market for simulating the deep etching of silicon and other substrates.

Isotropic & Bosch combination etch

Easy setup

IntelliSense recognizes that differences in etch systems can cause a large variance between any simulation and experimental results. In order to minimize these differences, simple setup methodology is provided to calibrate RECIPE models with your etch machines.

Sequential multiple etches

RECIPE allows you to explore novel structures and allows you to tailor your cross sections on a PC, rather than performing cumbersome and costly clean room experimentation. For instance, you can easily perform an anisotropic RIE etch, an isotropic etch and a Bosch etch — one right after another! In addition, you can use an isotropic etch to explore front-side release of structures.


Powerful capabilities

RECIPE offers you the ability to simulate a variety of RIE/ICP-related effects. These include: 

• Predict sidewall scalloping roughness and periodicity

• Predict final dimensions and shape of features

• Predict sidewall angles

• Simulation of RIE lag. You can estimate how much more quickly larger features etch compared with smaller features as a function of process parameters

• Positive angle or negative (retrograde) etching

• RIE notching and etch termination (pinch-off) behavior

• Front-side release processes in SOI based processes

• Bowl and stem etches (combination of isotropic and anisotropic etching) to form wine glass shapes for improved step coverage

• Release prediction: isotropic release of plates for poly-silicon-based MEMS

• Trench refill and trench isolation simulation for high-voltage circuits

• Angled etching of substrates

3-D visualization

Vizualize your etch simulation results in three dimensions

Validated database

RSM-derived etch database

Accurate results

Rigorous etch characterization experiments

Multi-etch simulation

Simulate effects of multiple etches

Sidewall & etch lag simulation

Predict important parameters such as etch lag and sidewall angles

Quick results

Faster than performing a real etch

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IntelliSuite, Total MEMS Solutions, CAD for MEMS, MEMaterial, AnisE, are registered trademarks of IntelliSense Software Corp. IntelliFAB, IntelliEtch, RECIPE, TEM, EMag, FABViewer, Clean Room, 3DBuilder, SYNPLE, EDA Linker, System Model Extractor, Fastfield Multiphysics, IntelliMask, IntelliMask Pro are trademarks of IntelliSense Software Corp.